Channelled substrate buried heterostructure InGaAsP/InP laser emitting at 1.55 μm
- 20 November 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (24) , 922-923
- https://doi.org/10.1049/el:19800657
Abstract
An InGaAsP/InP channelled substrate buried heterostructure (c.s.b.) laser emitting at 1.55 μm is fabricated by channel etching and single-stage l.p.e. growth without a low temperature growth technique or antimeltback layer. The c.s.b. laser shows low threshold current at room temperature c.w. operation and stable single transverse mode operation.Keywords
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