Femtosecond collision times of hot electrons in GaAs determined by picosecond time-resolved light scattering
- 31 July 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 63 (2) , 109-111
- https://doi.org/10.1016/0038-1098(87)91175-6
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Spectroscopy of hot carriers in semiconductorsJournal of Luminescence, 1986
- Subpicosecond Time-Resolved Raman Spectroscopy of LO Phonons in GaAsPhysical Review Letters, 1985
- Inelastic light scattering in highly excited GaAsJournal of Luminescence, 1985
- Light scattering from nonequilibrium electron-hole plasma excited by picosecond laser pulses in GaAsSolid State Communications, 1984
- Collision-narrowing of Raman spectrum for spin-density fluctuations of electrons in n-GaAsSolid State Communications, 1983
- Critical evaluation of the light-scattering spectrum for single-particle excitations in-GaAs at 300 KPhysical Review B, 1982
- Collective Modes of Photoexcited Electron-Hole Plasmas in GaAsPhysical Review Letters, 1981
- Light scattering from optically excited electron-hole plasmas in GaAsSolid State Communications, 1981
- Electronic Raman Scattering and Antiresonance Behavior in Highly Stressed Photoexcited SiliconPhysical Review Letters, 1979
- Lindhard Dielectric Function in the Relaxation-Time ApproximationPhysical Review B, 1970