A planar InP/InGaAsP heterostructure avalanche photodiode
- 1 September 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (9) , 1404-1407
- https://doi.org/10.1109/T-ED.1982.20889
Abstract
A new guard-ring structure for InP/InGaAsP heterostructure avalanche photodiodes (APD's) is presented. The guard ring consists of a linearly graded junction formed by beryllium ion implantation and two-step InP layers having different carrier concentrations (n-and n-layers grown on an InGaAsP layer). A planar InP/InGaAsP avalanche photodiode having this guard ring has a maximum avalanche gain of 110 at an initial photocurrent of 0.35 µA. The effectiveness of the guard ring is clearly discernible from the spot-scanned photoresponse of the diode.Keywords
This publication has 0 references indexed in Scilit: