Reduced reverse bias current in Al–GaAs and In0.75Ga0.25As–GaAs junctions containing an interfacial arsenic layer
- 1 July 1987
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 5 (4) , 982-984
- https://doi.org/10.1116/1.583830
Abstract
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