Zn K-edge EXAFS study of SILAR-grown zinc sulfide thin films
- 1 January 1997
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry
- Vol. 7 (5) , 741-745
- https://doi.org/10.1039/a608383h
Abstract
Zinc sulfide thin films grown by the successive ionic layer adsorption and reaction (SILAR) method have been characterized by extended X-ray absorption fine structure (EXAFS) measurements. The ZnS films were well crystallized even as-grown but annealing improved the crystallinity clearly. The films contained small amounts of oxygen and, according to the EXAFS results, oxygen in the SILAR-grown zinc sulfide thin films occurred as hydroxide ions both in the as-grown and in the annealed samples. The simulated radial distribution curves for two models, Zn(OH) 2 /ZnS and ZnO/ZnS, were calculated to analyse the film composition. The ZnS thin films were also characterized by IR and electron spectroscopy for chemical analysis (ESCA) measurements.Keywords
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