A 9-GHz frequency divider using Si bipolar super self-aligned process technology
- 1 April 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (4) , 181-183
- https://doi.org/10.1109/edl.1985.26089
Abstract
A very high-speed 1/8 frequency divider is fabricated, using Si bipolar super self-aligned process technology (SST), and tested. The circuit consists of three T-connected D-type master-slave flip-flops and buffers. A low voltage swing (225 mV) differential circuit technique is adopted for the first stage T-type flip-flop. The divider is capable of operating at up to 9 GHz with a power dissipation of 554 mW.Keywords
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