Free versus localized exciton recombination in Zn1−xCdxSe/ZnSe multiple quantum wells
- 19 August 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (8) , 1145-1147
- https://doi.org/10.1063/1.117086
Abstract
Time‐resolved photoluminescence studies of Zn1−xCdxSe/ZnSe multiple quantum wells as a function of photoinjected carrier density show a typical exciton localization dynamics at all injection levels in the high‐x samples (x∼0.2–0.3). On the contrary, the low‐x samples (x∼0.1) exhibit a gradual saturation of the exciton localization process and band‐filling behavior with increasing photoinjection. A rate‐equation model provides a description of the time‐dependent luminescence in all samples and allows a quantitative determination of the concentration of exciton localization centers.Keywords
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