Direct measurement of the deep defect density in thin amorphous silicon films with the ‘‘absolute’’ constant photocurrent method
- 15 November 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (10) , 6203-6210
- https://doi.org/10.1063/1.360566
Abstract
Direct measurement of the deep defect density in thin amorphous silicon films with the help of the ‘‘absolute’’ constant photocurrent method is demonstrated here. We describe in detail how the optical (photocurrent) absorption spectrum can be measured directly in absolute units (cm−1) without additional calibration and undisturbed by interference fringes. Computer simulation was performed to demonstrate absolute precision of the measurement and to explain residual interferences which are sometimes observed. The residual interferences are shown to be direct fingerprints of an inhomogeneous defect distribution.This publication has 18 references indexed in Scilit:
- Characterization of the defect density and band tail of an a-Si:H i-layer for solar cells by improved CPM measurementsSolar Energy Materials and Solar Cells, 1994
- Photothermal deflection spectroscopy of hydrogenated amorphous silicon at low energies and at low temperaturesPhilosophical Magazine Part B, 1994
- Depth profiling of nonuniform optical absorption in thin films: Application to hydrogenated amorphous siliconJournal of Applied Physics, 1991
- How to reach more precise interpretation of subgap absorption spectra in terms of deep defect density in a-Si:HJournal of Non-Crystalline Solids, 1991
- Surface states and in-depth inhomogeneity in a-Si:H thin films: Effects on the shape of the PDS sub-gap spectraJournal of Non-Crystalline Solids, 1989
- Suppression of interference fringes in absorption measurements on thin filmsOptics Communications, 1986
- Determination of the thickness and optical constants of amorphous siliconJournal of Physics E: Scientific Instruments, 1983
- Density of the gap states in undoped and doped glow discharge a-Si:HSolar Energy Materials, 1983
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982
- Direct measurement of the gap states and band tail absorption by constant photocurrent method in amorphous siliconSolid State Communications, 1981