Study Of Indium Tin Oxide Films Exposed To Atomic Oxygen
- 26 October 1989
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 1118, 133-135
- https://doi.org/10.1117/12.960955
Abstract
Indium tin oxide thin films (650 Å) were prepared by dc sputtering onto room temperature substrates. The films were exposed to an rf excited oxygen plasma, to qualitatively simulate the effects of atomic oxygen. Changes in optical, electrical, and structural properties were characterized as a function of exposure time.© (1989) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.Keywords
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