Model Calculation of the-Dependent Dielectric Function of Some Zinc-Blende Semiconductors
- 15 January 1972
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 5 (2) , 435-442
- https://doi.org/10.1103/physrevb.5.435
Abstract
A generalization of the Penn-model dielectric function containing two energy gaps is used to calculate for a number of semiconductors of the zinc-blende family. The results are in reasonable agreement with those of studies based on complete-zone integration. We show the importance of including the details of the band structure in discussing .
Keywords
This publication has 18 references indexed in Scilit:
- The effective mass and q dependent dielectric function of simple semiconductorsJournal of Physics C: Solid State Physics, 1971
- The band structure of several zinc-blende semiconductors from a self-consistent pseudopotential approachSolid State Communications, 1971
- Wave-Vector-Dependent Dielectric Function for Si, Ge, GaAs, and ZnSePhysical Review B, 1970
- Ionicity of the Chemical Bond in CrystalsReviews of Modern Physics, 1970
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. I. Electronic Dielectric ConstantPhysical Review B, 1969
- Microscopic Dielectric Function of a Model SemiconductorPhysical Review B, 1969
- Wave-Number-Dependent Dielectric Function of GermaniumJournal of the Physics Society Japan, 1965
- Dielectric Constant with Local Field Effects IncludedPhysical Review B, 1963
- Wave-Number-Dependent Dielectric Function of SemiconductorsPhysical Review B, 1962
- Self-Consistent Field Approach to the Many-Electron ProblemPhysical Review B, 1959