Numerical simulation of a forward-biased p-i-n structure with band-to-band Auger recombination

26 October 1978

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 14 (22) , 701-703
https://doi.org/10.1049/el:19780473

Abstract

A modification of the iterative scheme of Seidman and Choo is described. The proposed method is suited for the modelling of processes in semiconductor structures including Auger recombination. Some results of calculations are given.

Keywords

ELECTRONS AND HOLE EQUATION
SEIDMAN AND CHOO
ITERATIVE SCHEME
FORWARD BIASED P-I-N STRUCTURE
MODELLING
NUMERICAL SIMULATION
MOBILITIES
BAND TO BAND AUGER RECOMBINATION
SEMICONDUCTOR STRUCTURES

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