Diffusion and Segregation of Low‐Dose Implanted Boron in Silicon under Dry O 2 Ambient
- 1 May 1982
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 129 (5) , 1097-1103
- https://doi.org/10.1149/1.2124035
Abstract
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