Piezomodulated Electronic Spectra Of Semiconductor Heterostructures: Gaas/Al x ga l_X as Quantum Well Structures

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Abstract
When heterostructures of semiconductors are subjected to an alternating strain, the piezomodulated optical properties, as in the bulk, display signatures characteristic of electronic transitions. We have applied the piezomodulation technique to the electronic transitions associated with GaAs/AlxGai_xAs quantum well structures. Our results obtained at temperatures down to that of liquid helium with single-, double-, and multiple-quantum wells reveal electronic transitions in the wells, the barriers and the buffer layer with exceptional clarity. The effects of coupling in the double and multiple quantum wells are clearly identified. Relative advantages and limitations of the piezomodulation and the now well-established photomodulation techniques'are discussed on the basis of experimental results on identical samples under comparable experimental conditions.

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