Die Struktur von Elektroreflexionsspektren dotierter Halbleiter / Electroreflectance Spectra in Doped Semiconductors

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Abstract
Differences in the reflectance spectra of n- and p-doped Ge at the fundamental edge are interpreted in terms of the spatial field-dependence. These changes in the dielectric constants are achieved by a numerical solution of the Poisson equation and a calculation by the Franz-Keldyshtheory. Considering the inhomogeneous perturbation as a multilayer thin film problem the resulting reflectance was found by a recursion relation. Calculations were carried out for several dopings showing the existence of an optimal relation between the doping and the surface field. The ratio of field penetration to wavelength of the incident light accounts for the difference in optical behaviour. These results may well be understood by means of an exponential optical profile replacing the calculated one

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