A buried p-gate heterojunction field effect transistor for a power amplifier of digital wireless communication systems
- 20 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 3, 1095-1098
- https://doi.org/10.1109/mwsym.1999.779578
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- A rigorous dispersive characterization of microstrip cross and T junctionsIEEE Transactions on Microwave Theory and Techniques, 1990