Photo-Induced Current Spectroscopy for Normally-Off GaAs MESFETs
- 1 August 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (8A) , L479
- https://doi.org/10.1143/jjap.21.l479
Abstract
Deep levels in a very thin active layer of less than 0.1 µm, such as used for normally-off GaAs MESFETs, were succesfully detected by monitoring photo-induced drain current variation as a function of light wavelength. Four current peaks were observed at 2330, 1750, 1410 and 910 nm wavelengths. Illumination-induced change in the surface depletion layer width is supposed to play an important role in the current variation.Keywords
This publication has 3 references indexed in Scilit:
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