Carrier Mobilities in InP, GaAs, and AlSb†

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Abstract
The majority carrier mobilities in n-type In P and GaAs and p-type AlSb havo been measured as functions of impurity concentration and temperature in single crystals. Considerations of scattering of the charge carriers by ionized donors and acceptors suggest lattice mobilities at 300°K of 11 500 cm2/volt sec for electrons in GaAs, 6600 cm2/volt sec for electrons in InP, and 450 cm2/volt sec for holes in AlSb. Total ionized impurity contents can be estimated from the effects of impurity scattering on the carrier mobilities. The temperature dependencies of the electron mobility due to lattice scattering in the InP and the hole mobilities in GaAs and AlSb are greater than T -2. Tho effective mass of tho holes in AlSb is about 0·4 m0.

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