Electrical and optical properties of high performance MOCVD grown (Al x Ga 1−x ) y In 1−y P visible light-emitting diodes
- 28 October 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (22) , 1991-1992
- https://doi.org/10.1049/el:19931326
Abstract
Electrical and optical properties of high performance (AlxGa1−x)yIn1−yP light emitting diodes (LEDs) are described. The current transport mechanism is dominated by surface recombination. The orange diodes exhibit a lower surface recombination current level than the corresponding yellow and green LEDs. The device performances compare favourably with the commercially available LEDs in the orange to green spectral region.Keywords
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