Nonequilibrium partitioning during rapid solidification of SiAs alloys
Open Access
- 2 February 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 148 (1-2) , 172-182
- https://doi.org/10.1016/0022-0248(94)00836-1
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Solute trapping in aluminum alloysActa Metallurgica et Materialia, 1994
- Impurity segregation in Lennard-Jones A/AB heterostructures. I. The effect of lattice strainThe Journal of Chemical Physics, 1993
- Effect of nonequilibrium interface kinetics on cellular breakdown of planar interfaces during rapid solidification of Si-SnJournal of Crystal Growth, 1991
- Transition of a Si-As solution to the amorphous phase induced by pulsed-laser quenchingPhysical Review B, 1989
- Continuous growth model for interface motion during alloy solidificationActa Metallurgica, 1988
- Aperiodic stepwise growth model for the velocity and orientation dependence of solute trappingJournal of Materials Research, 1987
- Solute Trapping: Comparison of Theory with ExperimentPhysical Review Letters, 1986
- Effects of As impurities on the solidification velocity of Si during pulsed laser annealingApplied Physics Letters, 1985
- Nonequilibrium solid solutions obtained by heavy ion implantation and laser annealingJournal of Applied Physics, 1980
- Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in siliconJournal of Applied Physics, 1980