Stress splitting of theEL2 zero-phonon line: Need for reinterpretation of the main optical transition
- 15 May 1990
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (14) , 9850-9859
- https://doi.org/10.1103/physrevb.41.9850
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Stress splitting of the → transition of : Implied absence of in the structure of EL2Physical Review Letters, 1989
- Metastability of the Isolated Arsenic-Antisite Defect in GaAsPhysical Review Letters, 1988
- Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of?Physical Review Letters, 1988
- Arsenic antisite defectandEL2 in GaAsPhysical Review B, 1987
- Identification of a defect in a semiconductor:EL2 in GaAsPhysical Review B, 1986
- Optical and transient capacitance study of EL2 in the absence and presence of other midgap levelsJournal of Applied Physics, 1986
- Identification of the 0.82-eV Electron Trap,in GaAs, as an Isolated Antisite Arsenic DefectPhysical Review Letters, 1985
- Intracenter transitions in the dominant deep level (EL2) in GaAsApplied Physics Letters, 1983
- Identification of AsGa antisites in plastically deformed GaAsJournal of Applied Physics, 1982
- Crystal Dynamics of Gallium ArsenidePhysical Review B, 1963