A study of the orientation dependence of Ga(Al)As growth by MOVPE
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 310-320
- https://doi.org/10.1016/0022-0248(86)90317-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A critical appraisal of growth mechanisms in MOVPEJournal of Crystal Growth, 1984
- Thermodynamic aspects of organometallic vapor phase epitaxyJournal of Crystal Growth, 1983
- Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation DependenceJournal of the Electrochemical Society, 1983
- Investigations on low temperature mo-cvd growth of GaAsJournal of Electronic Materials, 1983
- Low-Pressure Chemical Vapor DepositionAnnual Review of Materials Science, 1982
- A New Method for Growing GaAs Epilayers by Low Pressure OrganometallicsJournal of the Electrochemical Society, 1979