Annealing of Electron Bombardment Damage in Silicon Crystals
- 1 November 1957
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 108 (3) , 645-648
- https://doi.org/10.1103/physrev.108.645
Abstract
Silicon crystals were bombarded at room temperature with electrons of 700 kev from a Van de Graaff accelerator. The annealing of the bombardment damage was studied between 200°C and 400°C by observing the recovery of the minority-carrier lifetime. The annealing was found to proceed with an activation energy of 1.3 ev. This is interpreted as being the activation energy associated with the lattice jump frequency.Keywords
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