Effect of oxide field on hot-carrier-induced degradation of metal-oxide-semiconductor field-effect transistors
- 27 April 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (17) , 1188-1190
- https://doi.org/10.1063/1.97906
Abstract
While the substrate current is a useful tool for extrapolating metal‐oxide‐semiconductor field‐effect transistor lifetime from accelerated stressing data, the substrate current can vary significantly during a constant‐voltage stress test. We have studied device degradation using a constant‐field method. The critical electron energy for device degradation is found to be 3–6 eV, depending on the oxide electric field. These values are 50% higher than those reported elsewhere.Keywords
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