Effect of Doping on the Electron Spin Resonanceain Phosphorus Doped Silicon Studied at Liquid Nitrogen Temperature
- 1 September 1964
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 19 (9) , 1751-1752
- https://doi.org/10.1143/jpsj.19.1751
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Effect of Doping on the Electron Spin Resonance in Phosphorus Doped SiliconJournal of the Physics Society Japan, 1964
- Low-temperature hall coefficient and conductivity in heavily doped siliconJournal of Physics and Chemistry of Solids, 1960
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954