Determination of 2D implanted ion distributions using inverse radon transform methods
- 1 May 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 42 (1) , 109-121
- https://doi.org/10.1016/0168-583x(89)90015-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Depth Profiles of Boron Atoms with Large Tilt‐Angle ImplantationsJournal of the Electrochemical Society, 1986
- Lateral spread of 31P and 11B ions implanted in siliconJournal of Applied Physics, 1973
- Backscattering study on lateral spread of implanted ionsApplied Physics Letters, 1973
- Theoretical Considerations on Lateral Spread of Implanted IonsJapanese Journal of Applied Physics, 1972