Estimation of junction depths in double-diffused transistors

• 1 January 1966
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
• Vol. 54  (12) , 1944-1945
• https://doi.org/10.1109/PROC.1966.5279

Abstract

Keywords

• IMPEDANCE
• CAPACITANCE MEASUREMENT
• AVALANCHE BREAKDOWN
• BREAKDOWN VOLTAGE
• CIRCUITS
• DOPING
• AREA MEASUREMENT
• DENSITY MEASUREMENT
• PARTICLE MEASUREMENTS
• TRANSMISSION LINE THEORY