Energy levels and Coulomb matrix elements in doped GaAs-(GaAl)As multiple-quantum-well heterostructures
- 15 June 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 27 (12) , 7611-7623
- https://doi.org/10.1103/physrevb.27.7611
Abstract
We present a simple model for calculating energy levels and envelope functions of electrons in the conduction subbands of doped GaAs-(GaAl)As multiple-quantum-well heterostructures. The model, which has no adjustable parameters, takes into account the discontinuity of the conduction-band edges at the GaAs-(GaAl)As interface and the electrostatic potential in the GaAs wells. Calculated intersubband splittings and Coulomb matrix elements are in full agreement with parameters derived from light-scattering experiments.This publication has 12 references indexed in Scilit:
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