Epitaxial Growth of SrTiO3 Films on Pt Electrodes and Their Electrical Properties
- 1 September 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (9S)
- https://doi.org/10.1143/jjap.31.2985
Abstract
Heteroepitaxial SrTiO3 films of perovskite structure with thicknesses of 46 to 184 nm were prepared by rf magnetron sputtering, holding substrate temperature at 400°C, on Pt films which were also epitaxially grown on a MgO(100) substrate in advance. The relative dielectric constant was estimated to be more than 300, and the leakage current density was less than 10-8 A/cm2. The analysis of the leakage current suggests Schottky barrier formation at the interface between SrTiO3 and Pt films, with a barrier height of about 1 V.Keywords
This publication has 1 reference indexed in Scilit:
- SrTiO3 Thin Film Preparation by Ion Beam Sputtering and Its Dielectric PropertiesJapanese Journal of Applied Physics, 1991