Ten-thousand-hours CW operation of 780 nm high-power AlGaAs laser with thin-tapered thickness active layer

14 September 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (19) , 1290-1291
https://doi.org/10.1049/el:19890863

Abstract

It is investigated that the T³ (thin-tapered thickness active layer) structure is effective in reducing the carrier density in the active layer as well as the optical density near the mirror. 780 nm AlGaAs lasers with this structure have been operating under 50°C, 30 mW CW (continuous wave) conditions over 10⁴ h with little degradation. The minimal degradation rate is about 0.45%/10³ h.

Keywords

CARRIER DENSITY REDUCTION
CONTINUOUS WAVE
1×104 H
50 DEGC
780 NM
30 MW
OPTICAL DENSITY REDUCTION
SEMICONDUCTOR LASERS
ALGAAS LASER
CW OPERATION
THIN-TAPERED THICKNESS ACTIVE LAYER

This publication has 0 references indexed in Scilit: