An electroreflectance study of CdTe
- 1 March 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (5) , 2005-2010
- https://doi.org/10.1063/1.337996
Abstract
Electroreflectance measurements are reported for bulk and epitaxial CdTe layers grown by molecular‐beam epitaxy (MBE). Spectra are analyzed to determine the E0, E1, and E1+Δ1 transition energies as well as the associated broadening energies. The broadening energies are found to correlate with the structural quality of the epilayers. Additional spectral features near the band edge (1.45–1.51 eV) and in the UV (3.1–4.3 eV) are discussed. The extremely sharp spectra obtained for the MBE‐grown epitaxial layers indicate high‐quality material.This publication has 25 references indexed in Scilit:
- MBE growth of CdTe, Hg1−xCdxTe, and multilayer structures: Achievements, problems, and prospectsJournal of Vacuum Science & Technology A, 1985
- Study of mercury cadmium telluride (MCT) surfaces by automatic spectroscopic ellipsometry (ASE) and by electrolyte electroreflectance (EER)Journal of Vacuum Science & Technology A, 1985
- Crystal growth of Cd1−xZnxTe and its use as a superior substrate for LPE growth of Hg0.8Cd0.2TeJournal of Vacuum Science & Technology A, 1985
- Ellipsometric studies of electronic interband transitions inPhysical Review B, 1984
- Properties of CdTe/InSb heterostructures prepared by molecular beam epitaxyJournal of Applied Physics, 1982
- Anodic Oxidation of GaAs in Mixed Solutions of Glycol and WaterJournal of the Electrochemical Society, 1976
- Third-derivative modulation spectroscopy with low-field electroreflectanceSurface Science, 1973
- Far-Ultraviolet Reflectance of II-VI Compounds and Correlation with the Penn—Phillips GapPhysical Review B, 1973
- Electroreflectance at a Semiconductor-Electrolyte InterfacePhysical Review B, 1967
- Absorption Spectrum of Germanium and Zinc-Blende-Type Materials at Energies Higher than the Fundamental Absorption EdgeJournal of Applied Physics, 1963