Ground-state energy of the polaron gas in two-dimensional semiconductor microstructures
- 15 June 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (17) , 10137-10142
- https://doi.org/10.1103/physrevb.37.10137
Abstract
The properties of the ground-state energy of a gas of quasi-two-dimensional interacting polarons are investigated by using the self-consistent theory of Singwi, Tosi, Land, and Sjölander to the response function of the electron system. The electron-phonon contribution to the ground-state energy is calculated for the electron gas confined in GaAs- As heterojunctions and quantum wells with appropriate form factors to take the finite width of the electron layer into account. For the sake of comparison, different approximations (Hubbard, random-phase approximation, and Hartree-Fock) for the screening are also considered.
Keywords
This publication has 15 references indexed in Scilit:
- Theoretical study of a two-dimensional quantum system: electrons on a helium filmJournal of Physics C: Solid State Physics, 1987
- Electron correlations in semiconductor heterostructuresPhysical Review B, 1987
- Screening of the electron–phonon interaction in GaAs heterostructuresPhysica Status Solidi (b), 1986
- Erratum: Screening of polar interaction in quasi-two-dimensional semiconductor microstructuresPhysical Review B, 1985
- Analysis of polaron effects in the cyclotron resonance ofn-GaAs and AlGaAs-GaAs heterojunctionsPhysical Review B, 1985
- Screening of polar interaction in quasi-two-dimensional semiconductor microstructuresPhysical Review B, 1985
- Erratum: Polaron effective mass in GaAs heterostructurePhysical Review B, 1985
- Cyclotron resonance studies of screening and polaron effects in GaAs-AlGaAs heterostructuresSurface Science, 1984
- Polaron effective mass in GaAs heterostructurePhysical Review B, 1983
- Electron correlations in inversion layersJournal of Physics C: Solid State Physics, 1976