High stability, plasma deposited, amorphous silicon nitride for thin film transistors
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 957-960
- https://doi.org/10.1016/0022-3093(85)90820-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Charge trapping instabilities in amorphous silicon-silicon nitride thin-film transistorsApplied Physics Letters, 1983
- Application of amorphous silicon field effect transistors in addressable liquid crystal display panelsApplied Physics A, 1981
- The hydrogen content of plasma-deposited silicon nitrideJournal of Applied Physics, 1978