Small-signal noise behaviour of companion p + - n - p + and p + - n - v - p + punchthrough microwave diodes
- 5 October 1972
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 8 (20) , 501-503
- https://doi.org/10.1049/el:19720364
Abstract
The frequency and current dependence of the noise factor of tuned microwave amplifiers, utilising punchthrough injection transit-time diodes, has been determined. Noise factors as low as 10 and 11 dB were obtained from companion p+-n-p+ and p+-n-v-p+ structures, respectively, when tuned to frequencies in the vicinity of 7.5 GHz.Keywords
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