Emitter-collector breakdown voltage BV ceo versus gain h FE for various n-p-n collector doping levels
- 9 October 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (21) , 803-805
- https://doi.org/10.1049/el:19800572
Abstract
The communication presents a set of design curves of collector-emitter breakdown voltage BVceo versus gain hFE for various collector doping levels and thickness for n-p-n transistors. The results include epitaxial layer punch through and radial c-b junction breakdown.Keywords
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