Ka-band high power pseudomorphic heterostructure FET

11 May 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (10) , 639-640
https://doi.org/10.1049/el:19890433

Abstract

A 0.25 µm gate-length, 900 µm gate width doped-channel, pseudomorphic heteTostructure FET with high output power and efficiency is reported. At 35 GHz, output power is 658mW with 3.2dB power gain and 24% power-added efficiency.

Keywords

GATE WIDTH
POWER-ADDED EFFICIENCY
EFFICIENCY
OUTPUT POWER
0.25 MICRON
DOPED-CHANNEL
900 MICRON
35 GHZ
658 MW
POWER GAIN
HIGH POWER PSEUDOMORPHIC HETEROSTRUCTURE FET
GATE-LENGTH

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