Initial stage of aluminum thin film growth on Si(100) surfaces as observed by scanning tunneling microscopy
- 1 March 1995
- journal article
- Published by Elsevier in Surface Science
- Vol. 325 (3) , 279-284
- https://doi.org/10.1016/0039-6028(94)00739-x
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Temperature-depending growth and surface structures of low-coverage Al phases on Si(100) observed by scanning tunneling microscopySurface Science, 1994
- Structural determination of Si(100)2×2-Al by tensor LEEDPhysical Review B, 1993
- Adsorption of Al on Si(100): A surface polymerization reactionPhysical Review Letters, 1993
- Structural studies of Al/Si(100) by LEEDApplied Surface Science, 1992
- Structure of low-coverage phases of Al, Ga, and In on Si(100)Physical Review B, 1991
- Aluminum on the Si(100) surface: Growth of the first monolayerPhysical Review B, 1991
- Epitaxial growth of Al on Si by thermal evaporation in ultra-high vacuum: growth on Si(100)2 × 1 single and double domain surfaces at room temperatureSurface Science, 1990
- Stability of metallic dimers on the Si(001) surfacePhysical Review Letters, 1989
- Surface structures of Si(100)-Al phasesSurface Science, 1989
- Indium overlayers on clean Si(100)2×1: Surface structure, nucleation, and growthSurface Science, 1986