Electron beam stimulated nonthermal crystallization of CdS surface layers: Observations by real-time atomic-resolution electron microscopy
- 23 June 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (25) , 1751-1753
- https://doi.org/10.1063/1.96824
Abstract
The transformations of partially amorphous CdS surfaces induced by 100–400 keV electrons have been followed in real time by atomic-resolution electron microscopy. A definite sequence of atomic rearrangements leading to nucleation and growth of CdS and Cd crystals was observed. These processes are believed to be due to nonthermal mechanisms involving inelastic electron collisions rather than direct knock-on collisions between electrons and the atomic nuclei since there is no threshold over the range of incident electron energies. These effects may be responsible for the degradation of electron beam pumped CdS lasers which has been reported elsewhere.Keywords
This publication has 6 references indexed in Scilit:
- Laser etching of 0.4 μm structures in CdTe by dynamic light guidingApplied Physics Letters, 1986
- Investigation of the degradation of electron-beam-tube laser screensSoviet Journal of Quantum Electronics, 1980
- Investigation of degradation of electron-beam-pumped cadmium sulfide lasersSoviet Journal of Quantum Electronics, 1976
- Construction and some potential applications of electron-beam-excited semiconductor lasers (review)Soviet Journal of Quantum Electronics, 1974
- Displacement of the Cadmium Atom in Single Crystal CdS by Electron BombardmentPhysical Review B, 1962
- Displacement of the Sulfur Atom in CdS by Electron BombardmentJournal of Applied Physics, 1960