Ambipolar transport in double heterostructure injection lasers

1 April 1980

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 1 (4) , 58-60
https://doi.org/10.1109/edl.1980.25229

Abstract

Ambipolar conduction through the electrical confinement layers is shown to influence the properties of some double heterostructure injection lasers. A model of contact-limited ambipolar conduction is consistent with known material parameters of (Al,Ga)As lasers and explains several anomalies in the measured device electrical characteristics. The portion of current lost to lasing due to poor carrier confinement in the active region of injection lasers may be greater than previously expected.

Keywords

CARRIER CONFINEMENT
LASER MODES
THRESHOLD CURRENT
CURRENT MEASUREMENT
LOSS MEASUREMENT
LASER TRANSITIONS
ELECTRIC VARIABLES MEASUREMENT
ELECTRIC VARIABLES
CONTACT RESISTANCE
RADIATIVE RECOMBINATION

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