An experimental approach was developed combining differential etching, rate striations, and spreading resistance measurements. This approach permitted the direct determination of dopant concentrations and growth rates on a microscale in gallium‐doped germanium. Compositional inhomogeneities as revealed by differential etching were quantitatively related to dopant concentration variations. Rotational striations were identified as dopant concentration maxima associated with decreasing growth rates. Dopant concentration variations up to 50% were found within rotational cycles. The experimental results were subjected to a Burton, Prim, and Slichter analysis on a microscale. It was found that steady‐state segregation is encountered only during increasing growth rates within each rotational cycle; the dependence of dopant segregation on growth rate became weaker in the presence of remelting. In all instances the effective diffusion layer thickness was smaller than that computed on the basis of the Cochran analysis.