Theory of single δ-layer
- 31 December 1991
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 10 (1) , 107-112
- https://doi.org/10.1016/0749-6036(91)90157-m
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Thomas-Fermi theory of δ-doped semiconductor structures: Exact analytical results in the high-density limitPhysical Review B, 1990
- Maximum low-temperature mobility of two-dimensional electrons in heterojunctions with a thick spacer layerPhysical Review B, 1990
- Electronic properties of spike-doped InSbSemiconductor Science and Technology, 1990
- Subband physics for a “realistic” δ-doping layerSurface Science, 1988
- Electronic subbands of aδdoping layer in GaAs in a parallel magnetic fieldPhysical Review B, 1986
- Single-particle relaxation time versus scattering time in an impure electron gasPhysical Review B, 1985
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Properties of Electrons in Semiconductor Inversion Layers with Many Occupied Electric Subbands. I. Screening and Impurity ScatteringPhysical Review B, 1970