TEM Observations of Defects in Ge‐Doped LPE GaAs and Al0.4Ga0.6As

Publisher Website
Google Scholar
Abstract
The formation of structural defects in degenerate Ge‐doped LPE and films was investigated. At growth initiation temperatures of 780°C, Ge doping does not result in structural defects even in films grown from solutions containing ∼50 a/o Ge and even after heat‐treatment at 720° and 820°C. On the other hand, films grown from heavily Ge‐doped solutions below the decomposition temperature of (737°C) contained defects after a 15 hr heat‐treatment at the growth temperature. These defects consisted of dislocation clusters and were only observed in films grown on substrates with elevated dislocation densities. It is concluded that the observed defects did not nucleate from the threading dislocations, but from or particles decorating the dislocations.

This publication has 0 references indexed in Scilit: