Field-effect transistor with the water-soluble self-acid-doped polyaniline thin films as semiconductor
- 5 March 1998
- journal article
- Published by Elsevier in Synthetic Metals
- Vol. 93 (3) , 155-160
- https://doi.org/10.1016/s0379-6779(97)04072-1
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Surface field effect of polyaniline filmSynthetic Metals, 1991
- Field-effect conduction in polyalkylthiophenesSynthetic Metals, 1991
- Light-emitting diodes based on conjugated polymersNature, 1990
- A field-effect transistor based on conjugated alpha-sexithienylSolid State Communications, 1989
- New semiconductor device physics in polymer diodes and transistorsNature, 1988
- Field-effect mobility of poly(3-hexylthiophene)Applied Physics Letters, 1988
- Macromolecular electronic device: Field-effect transistor with a polythiophene thin filmApplied Physics Letters, 1986
- CHEMICALLY PREPARED POLY(N-METHYLPYRROLE) THIN FILM. ITS APPLICATION TO THE FIELD-EFFECT TRANSISTORChemistry Letters, 1986
- Semiconductor properties of polyacetylene p-(CH)x : n-CdS heterojunctionsJournal of Applied Physics, 1980
- Polyacetylene, (CH)x: n-type and p-type doping and compensationApplied Physics Letters, 1978