AN STM STUDY OF THE (2×4) AND c(4×4) RECONSTRUCTIONS FORMED ON GaAs(001) BY MOLECULAR BEAM EPITAXY

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Abstract
Atomic resolution scanning tunneling microscopy (STM) has been used to study the Asterminated (2×4) and c(4×4) reconstructions formed on GaAs(001) surfaces grown in situ by molecular beam epitaxy (MBE). Filled states STM images of the (2×4) surface always showed unit cells consisting of two As dimers in the top layer. Cooling this surface under an As flux led initially to a highly kinked (2×4) phase before the transition to the c(4×4) structure. At no point were three As dimers observed in the top layer for the (2×4) unit cell. The c(4×4) structure involves the chemisorption of a second layer of As onto an already As-terminated surface. STM images of this surface showed a series of bright rectangular blocks consisting, when complete, of three pairs of As atoms.

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