Epitaxial growth of aluminum nitride on Si(111) by reactive sputtering
- 21 October 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (17) , 2097-2099
- https://doi.org/10.1063/1.106092
Abstract
We have studied growth of aluminum nitride (AlN) on Si(111) by ultra-high vacuum (UHV) reactive dc-magnetron sputtering under a mixture of Ar and N2 gases. As-grown films have been examined by x-ray diffraction, Auger electron spectroscopy (AES), and transmission electron microscopy (TEM). Results of x-ray diffraction show texturing with AlN [0001]//Si[111]. Complementary TEM examinations observe epitaxy of AlN on Si(111), with AlN[112̄0]//Si[22̄0]. The AlN/Si interface is sharp and flat. The lowest substrate temperature required to achieve epitaxy Tepi has been determined to be ∼600 °C. A dislocation density in AlN film grown at 700 °C has been estimated to be ∼3×1011/cm2.Keywords
This publication has 7 references indexed in Scilit:
- Reactive sputter deposition of zirconium nitride/aluminum nitride multilayers: Chemical competition effects and structural characterizationsJournal of Vacuum Science & Technology A, 1991
- Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphologyJournal of Vacuum Science & Technology A, 1989
- Epitaxial growth of ZrN on Si(100)Applied Physics Letters, 1988
- Growth and properties of single crystal TiN films deposited by reactive magnetron sputteringJournal of Vacuum Science & Technology A, 1985
- Aluminum Nitride Epitaxially Grown on Silicon: Orientation RelationshipsJapanese Journal of Applied Physics, 1981
- The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor processApplied Physics Letters, 1978
- On pointed minima in the interfacial energy of bicrystal systemsPhilosophical Magazine, 1965