Electric field induced interband second harmonic generation in GaAs/AlGaAs quantum wells

Abstract
We investigate the second order optical susceptibility χ(2) of symmetric GaAs/AlGaAs quantum wells under applied bias, in the frequency region near half the band gap. The second harmonic is generated in a transmission geometry, and is separated from bulk contribution by a lock-in detection technique. As opposed to previous reports, we find that χxzx(2) is much higher than χzxx(2). For 50 Å quantum wells, χxzx(2)≊25 pm/V and χzxx(2)≊0 at λ=1.66 μm under an applied electric field E=50 kV/cm.

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