Pore Formation and Propagation Mechanism in Porus Silicon
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
This paper presents a model of the microporous silicon formation process which is based on hole depletion due to quantum confinement in the porous structure. This model is compared with the formation of larger porous structures (meso-, macroporous) where hole depletion is generated by a space charge region.Keywords
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