Theory and experiment of heterojunction bipolar transistor at very low temperatures

1 January 1986

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 89-92
https://doi.org/10.1109/iedm.1986.191119

Abstract

This paper presents the first observation of 4.2 K operation of HBT and describes the construction of a new theory to interpret it. As a result, possibility of a few mV logic swing circuit is theoretically predicted.

Keywords

HETEROJUNCTION BIPOLAR TRANSISTORS
TEMPERATURE
PHOTONIC BAND GAP
CHARGE CARRIER PROCESSES
ELECTRON EMISSION
ELECTRON MOBILITY
MOLECULAR BEAM EPITAXIAL GROWTH
SILICON
THRESHOLD VOLTAGE
CURRENT DENSITY

This publication has 0 references indexed in Scilit: