New Field-Effect Transistor Using the Semiconducting Plasma-Polymerized Films

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Abstract
The preparation and characteristics of the field-effect transistor (FET) based on plasma-polymerized pyrrole (PP-Py) are presented. The electric conductivity of PP-Py was 10−9 S/cm and its value was significantly improved to the 10−6 S/cm by the thermal treatment of PP-Py under nitrogen atmosphere. The PP-Py based FET displayed the typical enhancement-type FET properties with excellent source current (IDS)-drain voltage (VDS) characteristics at various gate voltages (VG). Field-effect mobility was found to be around 1.1 × 10−4 cm2/V s, and the threshold voltage of FET performance was -1.2 volt.