Cell model for E2PROM floating-gate memories

• 1 January 1982
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• https://doi.org/10.1109/iedm.1982.190400

Abstract

Keywords

• DIELECTRICS
• NONVOLATILE MEMORY
• CAPACITANCE
• ELECTRONS
• THRESHOLD VOLTAGE
• SHAPE
• TUNNELING