Surface-Structure Analysis by Optical Simulation of LEED Patterns
- 1 November 1968
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (12) , 5658-5668
- https://doi.org/10.1063/1.1656030
Abstract
The principles governing the coherent scattering of low‐energy electrons are considered for the purpose of determining the degree of correspondence between LEED patterns and Fraunhofer optical diffraction patterns from plane gratings representing the arrangement of atoms at a crystal surface. The analysis indicates that an optical diffraction pattern approximates a composite LEED pattern which contains all beams observed over a range of electron energies. Accordingly, the technique of optical simulation is employed in the analysis of LEED patterns obtained from complicated surface structures. The experimental method is described and applied to the determination of the arrangement of atoms responsible for several characteristic LEED patterns: Au (100) 5×10, Cu (100) + O2, and W (100) + H2. In addition, models proposed previously to account for the Si (111) 7×7 and Ge (100) 8×8 patterns are examined.This publication has 20 references indexed in Scilit:
- Comments on “multiple scattering versus superstructures in low energy electron diffraction”Surface Science, 1968
- Band structure treatment of low energy electron diffraction intensitiesSurface Science, 1967
- Leed and heed studies of the interaction of oxygen with single crystal surfaces of copperSurface Science, 1967
- Multiple scattering versus superstructures in low energy electron diffractionSurface Science, 1967
- On the anomalous surface structures of goldSurface Science, 1967
- Low-energy electron diffraction and surface structural chemistryProgress in Solid State Chemistry, 1965
- LEED studies of adsorption on clean (100) copper surfacesSurface Science, 1965
- Possible structures for clean, annealed surfaces of germanium and siliconSurface Science, 1964
- Surface Structures and Properties of Diamond-Structure SemiconductorsPhysical Review B, 1961
- A New Type of ‘X-Ray Microscope’Nature, 1939